NPN general purpose transistors 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92. C550C Datasheet, PDF Electronic Manufacturer Part no Datasheet Electronics Description NXP Semiconductors NPN general purpose transistors Motorola, Inc Low Noise Transistors NXP Semiconductors NPN general purpose transistors Siemens Semiconductor G. 2N3903, 2N3904 General Purpose Transistors NPN Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 40 Vdc Collector−Base Voltage VCBO 60 Vdc Emitter−Base Voltage VEBO 6.0 Vdc Collector Current − Continuous IC 200 mAdc Total Device Dissipation @ TA = 25°C Derate. Silicon Diffused Power Transistor BU2532AL DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Part Number : 2N2222

Function : Silicon NPN Power Transistor

2n2222a Transistor Datasheet Pdf

Manufactures : Inchange Semiconductor

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Description :

INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·Collector Current- IC= 0.8A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·Complement to Type 2N2907 APPLICATIONS ·Designed for general-purpose switching and linear amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage IC Collector Current-Continuous IBM Base Current-Peak PC Collector Power Dissipation@TC=25℃ TJ Junction Temperature Tstg Storage Temperature THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-a Thermal Resistance,Junction to Ambient isc Product Specification 2N2222 VALUE 60 30 5 0.8 0.2 0.5 150 -65~150 UNIT V V V A A W ℃ ℃ MAX 350 UNIT K/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N2222 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR) CEO V(BR)EBO Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage IC=10mA ; IB=0 IE=10μA ; IC=0 VCE(sat)-1 Collector-Emitter Saturation Voltage VCE(sat)-2 Collector-Emitter Saturation Voltage VBE(sat)-1 Base-Emitter Saturation Voltage VBE(sat)-2 Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current IC= 150mA; IB= 15mA IC= 500mA; IB= 50mA IC= 150mA; IB= 15mA IC= 500mA; IB= 50mA VCB= 50V; IE=0 VEB= 5V; IC=0 hFE-1 DC Current Gain hFE-2 DC Current Gain hFE-3 DC Current Gain hFE-4 DC Current Gain hFE-5 DC Current Gain fT Current Gain-Bandwidth Product COB Output Capacitance Switching Times IC= 0.1mA ; VCE= 10V IC= 1mA ; VCE= 10V IC= 10mA ; VCE= 10V IC= 150mA ; VCE= 10V IC= 500mA ; VCE= 10V IC= 20mA ; VCE= 20V;ftest= 100MHz IE= 0 ; VCB= 10V; ftest= 1.0MHz td Delay Time tr Rise Time tstg Storage Time tf Fall Time IC= 150mA; IB1= -IB2= 15mA MIN MAX UNIT 30 V 5V 0.4 V 1.6 V 1.3 V 2.6 V 1.5 uA 50 nA 35 50 75 100 300 30 250 MHz 8 pF 10 ns 25 ns 200 ns 60 ns isc Website：www.iscsemi.cn […]

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2N2222 Datasheet

This post explains for the semiconductor 2N3904.

The Part Number is 2N3904.

The function of this semiconductor is NPN Switching Transistor

Manufacturers : Philips, NXP

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DESCRIPTION

NPN switching transistor in a TO-92; SOT54 plastic package. PNP complement: 2N3906.

FEATURES

1. Low current (max. 200 mA)
2. Low voltage (max. 40 V).

Pinout

LIMITING VALUES

1. Collector-base voltage open emitter : VCBO = 60 V
2. Collector-emitter voltage open base : VCEO = 40 V
3. Emitter-base voltage open collector ; VEBO = 6 V
4. Collector current (DC) : IC = 200 mA
5. Peak collector current : ICM = 300 mA
6. Peak base current : IBM = 100 mA
7. Total power dissipation (Tamb ≤ 25 °C) : Ptot = 500 mW

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